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MMBT5551

Manufacturer:

On Semiconductor

Mfr.Part #:

MMBT5551

Datasheet:
Description:

BJTs SOT-23-3 SMD/SMT NPN 350 mW Collector Base Voltage (VCBO):180 V Collector Emitter Voltage (VCEO):160 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Voltage Rating (DC)160 V
Length2.92 mm
Width1.3 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height930 µm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Weight0.03 g
Contact PlatingTin
Frequency300 MHz
Number of Elements1
Current600 mA
Current Rating600 mA
Lifecycle StatusEOL (Last Updated: 5 months ago)
Max Power Dissipation350 mW
Power Dissipation350 mW
Max Collector Current600 mA
Collector Emitter Breakdown Voltage160 V
Transition Frequency100 MHz
Element ConfigurationSingle
Max Frequency300 MHz
Collector Emitter Voltage (VCEO)160 V
Max Junction Temperature (Tj)150 °C
Max Breakdown Voltage160 V
Gain Bandwidth Product100 MHz
Collector Base Voltage (VCBO)180 V
Collector Emitter Saturation Voltage200 mV
Emitter Base Voltage (VEBO)6 V
hFE Min80
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 months ago)
Max Cutoff Collector Current50 nA
Transistor TypeNPN

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